Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions

Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of silicon implanted with 1×10 16 ions/cm 2 of Mn ions and silicon co-implanted with both 1×10 16 ions/cm 2 of Mn ions and 2×10 16 ions/cm 2 of carbon ions at a substrate temperature of 350 °C. Afterward, the samples were annealed at temperatures between 800 and 1000°C. The SIMS results show a marked difference between the two specimens while the TEM results show similar features in terms of Mn precipitation and particle evolution. The carbon implanted specimens show additional features that appear to be amorphous silicon pockets within the crystalline implant region. Only one specimen (Mn only implant, unannealed) showed any ferromagnetic properties.